منابع مشابه
A Fiber Detector Radiation Hardness Test
An intense 146 MeV/c pion beam was stopped inside a scintillating fiber detector made out of 12 planes with 16 pixels each, where every pixel consists out of 8 × 8 scintillating fibers of 500 μm diameter dense packed. The detector was irradiated for 52 hours to more than 1 Mrad at its center. Before and directly after the irradiation the detector has been exposed to a particle beam to compare t...
متن کاملRadiation hardness of the PIBETA detector components
We have examined long term changes in signal amplitude gain, energy resolution and detection efficiency for the active components of the PIBETA detector system. Beam defining plastic scintillation counters were operated in a ∼ 1 MHz stopped π + beam for a period of 297 days, accumulating radiation doses of up to 2 · 10 6 rad. Detectors in the charged particle tracking system—a pair of cylindric...
متن کاملRadiation Hardness Test of BJTs under Designated Application
Performance and properties of bipolar junction transistor (BJT) devices are affected due to the harsh radiation environment. This report reviews the typical effects occurring in BJT devices due to irradiation with xrays. The defect parameters on the device tested is obtained by in situ experimental technique. In order to study the selfannealing behaviour in BJTS due to ionizing and displacement...
متن کاملRadiation hardness of SiPM in the PANDA radiation environment
Silicon photomultipliers (SiPM) consist of a pixelized array of micrometric avalanche photodiodes (APD) connected in parallel. Their small size and low voltage operation allows the construction of very compact detectors. The price to pay is the megahertz dark count rate at room temperature. These events are generated by thermal electrons within the pixel and are undistinguishable from real sign...
متن کاملRadiation hardness of amorphous silicon particle sensors
Radiation tests of 32 lm thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of 2 · 10 protons/cm. The results are compared to irradiation of similar 1 lm and 32 lm thick n–i–p diodes using a proton beam of 405 keV at a fluence of 3 · 10 protons/cm. All samples exhibited a drop of the photoconductivity and an increase in th...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 2000
ISSN: 0168-9002
DOI: 10.1016/s0168-9002(99)01437-0